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 VISHAY
ILD610
Vishay Semiconductors
Optocoupler, Phototransistor Output, Dual Channel
Features
* * * * * * Dual Version of SFH610 Series Isolation Test Voltage, 5300 VRMS VCEsat 0.25 ( 0.4) V at IF = 10 mA, IC = 2.5 mA VCEO = 70 V Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
i179045
A1 C2 A3 C4
8E 7C 6E 5C
e3
Pb
Pb-free
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * CSA 93751 * BSI IEC60950 IEC60065
put. The ILD610 series is the dual version of SFH610 series and uses a repetitive pin-out configuration instead of the more common alternating pin-out used in most dual couplers.
Order Information
Part ILD610-1 ILD610-2 Remarks CTR 40 - 80 %, DIP-8 CTR 63 - 125 %, DIP-8 CTR 100 - 200 %, DIP-8 CTR 160 - 320 %, DIP-8 CTR 63 - 125 %, SMD-8 (option 7) CTR 100 - 200 %, DIP-8 400 mil (option 6) CTR 100 - 200 %, SMD-8 (option 9) CTR 160 - 320 %, SMD-8 (option 9)
Description
The ILD610 series is a dual channel optocoupler series for high density applications. Each channel consists of an optically coupled pair with a Gallium Arsenide infrared LED and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and out-
ILD610-3 ILD610-4 ILD610-2X007 ILD610-3X006 ILD610-3X009 ILD610-4X009
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Surge forward current Power dissipation Derate linearly from 25 C DC forward current IF t 10 ms Test condition Symbol VR IFSM Pdiss Value 6.0 1.5 100 1.3 60 Unit V A mW mW/C mA
Document Number 83651 Rev. 1.6, 26-Oct-04
www.vishay.com 1
ILD610
Vishay Semiconductors Output
Parameter Collector-emitter voltage Collector current t 1.0 ms Power dissipation Derate linearly from 25 C Test condition Symbol VCE IC IC Pdiss Value 70 50 100 150 2.0
VISHAY
Unit V mA mA mW mW/C
Coupler
Parameter Isolation test voltage Isolation resistance Test condition t = 1.0 sec. VIO = 500 V, Tamb = 25 C VIO = 500 V,Tamb = 100 C Storage temperature Operating temperature Junction temperature Lead soldering time at 260 C Symbol VISO RIO RIO Tstg Tamb Tj Value 5300 1012 10
11
Unit VRMS C C C sec.
- 55 to + 150 - 55 to + 100 100 10
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Capacitance Test condition IF = 60 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO Min Typ. 1.25 0.01 25 Max 1.65 10 Unit V A pF
Output
Parameter Collector-emitter breakdown voltage Collector-emitter dark current Collector-emitter capacitance Collector-emitter leakage current Test condition IC = 10 mA, IE = 10 A Part Symbol BVCEO BVCEO VCE = 10 V VCE = 5.0 V, f = 1.0 MHz VCE = 10 V ILD610-1 ILD610-2 ILD610-3 ILD610-4 ICEO CCE ICEO ICEO ICEO ICEO Min 70 6.0 Typ. 90 7.0 2.0 7.0 2.0 2.0 5.0 5.0 50 50 100 100 50 Max Unit V V nA pF nA nA nA nA
Coupler
Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 10 mA, IC = 2.5 mA Symbol VCEsat CC Min Typ. 0.25 0.35 Max 0.40 Unit V pF
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Document Number 83651 Rev. 1.6, 26-Oct-04
VISHAY
ILD610
Vishay Semiconductors
Current Transfer Ratio
Parameter CTR1) Test condition IF = 10 mA, VCE = 5.0 V Part ILD610-1 ILD610-2 ILD610-3 ILD610-4 IF = 1.0 mA, VCE = 5.0 V ILD610-1 ILD610-2 ILD610-3 ILD610-4
1)
Symbol CTR CTR CTR CTR CTR CTR CTR CTR
Min 40 63 100 160 13 22 34 56
Typ.
Max 80 125 200 320
Unit % % % % % % % %
CTR will match within a ratio of 1.7:1
Switching Characteristics
Non-saturated Parameter Rise time Test condition VCC = 5.0, RL = 75 , IF = 10 mA Part ILD610-1 ILD610-2 ILD610-3 ILD610-4 Fall time VCC = 5.0, RL = 75 , IF = 10 mA ILD610-1 ILD610-2 ILD610-3 ILD610-4 Turn-on time VCC = 5.0, RL = 75 , IF = 10 mA ILD610-1 ILD610-2 ILD610-3 ILD610-4 Turn-off time VCC = 5.0, RL = 75 , IF = 10 mA ILD610-1 ILD610-2 ILD610-3 ILD610-4 Saturated Parameter Rise time Test condition VCC = 5.0, RL = 1.0 k, IF = 5.0 mA Part ILD610-1 ILD610-2 ILD610-3 ILD610-4 Fall time VCC = 5.0, RL = 1.0 k, IF = 5.0 mA ILD610-1 ILD610-2 ILD610-3 ILD610-4 Turn-on time VCC = 5.0, RL = 1.0 k, IF = 5.0 mA ILD610-1 ILD610-2 ILD610-3 ILD610-4 Symbol tr tr tr tr tf tf tf tf ton ton ton ton Min Typ. 2.0 2.8 3.3 4.6 11 2.6 3.1 15 3.0 4.3 4.6 6.0 Max Unit Symbol tr tr tr tr tf tf tf tf ton ton ton ton toff toff toff toff Min Typ. 2.0 2.5 2.9 3.3 2.0 2.6 3.1 3.5 3.0 3.2 3.6 2.3 2.9 3.4 3.7 4.1 Max Unit
Document Number 83651 Rev. 1.6, 26-Oct-04
www.vishay.com 3
ILD610
Vishay Semiconductors
Parameter Turn-off time Test condition VCC = 5.0, RL = 1.0 k, IF = 5.0 mA Part ILD610-1 ILD610-2 ILD610-3 ILD610-4 Symbol toff toff toff toff Min Typ. 18 2.9 3.4 25 Max
VISHAY
Unit
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.4
VF - Forward Voltage - V
1.5
NCTR - Normalized CTR
1. 3 1.2 1.1 1.0 0.9 0.8 0.7 .1
Ta = -55C
Normalized to: VCE = 10 V, IF = 10 mA, TA= 25C CTRce(sat) VCE = 0.4 V 1.0 TA= 50C
Ta = 25C
0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100
Ta = 85C
1 10 IF - Forward Current - mA
100
iilct6_03
I F - LED Current - mA
iilct6_01
Figure 1. Forward Voltage vs. Forward Current
Figure 3. Normalized Non-Saturated and Saturated CTR vs. LED Current
1.5
NCTR - Normalized CTR
NCTR - Normalized CTR
1.0
Normalized to: VCE = 10 V, IF = 10 mA TA= 25C CTRce(sat) VCE = 0.4 V
1.5 Normalized to: VCE = 10 V, IF = 10 mA TA= 25C 1.0 CTRce(sat) VCE = 0.4 V TA= 70C 0.5 NCTR(SAT) NCTR 0.0 .1
iilct6_04
0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100 I F - LED Current - mA
1
10
100
I F - LED Current - mA
iilct6_02
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current
Figure 4. Normalized Non-Saturated and Saturated CTR vs. LED Current
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Document Number 83651 Rev. 1.6, 26-Oct-04
VISHAY
ILD610
Vishay Semiconductors
1.5
NCTR - Normalized CTR
1000
tpLH - Propagation Delay s
2.5
tpHL - Propagation Delay s
1.0
Normalized to: V CE = 10 V, I F = 10 mA, TA = 25C CTRce(sat) VCE = 0.4 V TA = 85C
Ta = 25C, IF = 10 mA Vcc = 5 V, Vth = 1.5 V tpHL 100 2.0
0.5 NCTR(SAT) NCTR .1 1 10 IF - LED Current - mA 100
10 tpLH 1 .1 1 10 100 RL - Collector Load Resistor - k
1.5
0.0
1.0
iilct6_05
iilct6_08
Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED Current
Figure 8. Propagation Delay vs. Collector Load Resistor
35
ICE - Collector Current - mA
30 25 20 15 10 5 0 0 10 20 30 40 50 60
iild610_09
IF 50C 70C 85C VO tD tR tPLH VTH=1.5 V tPHL tS tF
25C
iilct6_06
IF - LED Current - mA
Figure 6. Collector-Emitter Current vs. Temperature and LED Current
Figure 9. Switching Timing
10 5
ICEO - Collector-Emitter - nA
10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100
iild610_10
VCC =5 V F=10 KHz DF=50%
Vce = 10 V Typical
RL VO
IF =10 mA
TA - Ambient Temperature - C
iilct6_07
Figure 7. Collector-Emitter Leakage Current vs.Temp.
Figure 10. Non-saturated Switching Schematic
Document Number 83651 Rev. 1.6, 26-Oct-04
www.vishay.com 5
ILD610
Vishay Semiconductors
VISHAY
Figure 11. Saturated Switching Time Test Waveform
Input ton tpdon Output 10% 50% 90% td tr tpdoff ts tr 10% 50% 90% toff
iild610_11
Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8
ISO Method A
3
2
1
.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006
.300 (7.62) typ.
10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30)
.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)
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Document Number 83651 Rev. 1.6, 26-Oct-04
VISHAY
ILD610
Vishay Semiconductors
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18450
Document Number 83651 Rev. 1.6, 26-Oct-04
www.vishay.com 7
ILD610
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com 8
Document Number 83651 Rev. 1.6, 26-Oct-04


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